Publications from 2011-2015

2015

T. Dinh, H.-P. Phan, T. Kozeki, A. Qamar, T. Namazu, N.-T. Nguyen, and D. V. Dao, Thermoresistive properties of p-type 3C-SiC nanoscale thin films for high temperature MEMS thermal-based sensors, RSC Adv., 2015, 5(128), 106083-106086. (IF=3.84)

A. Qamar, D. V. Dao, J. Han, H.-P. Phan, A. Younis, P. Tanner, T. Dinh, L. Wang, and S. Dimitrijev, Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices, J. Mater. Chem. C, 2015, 3 (48), 12394-12398. (IF= 4.7)

H.-P. Phan, T. Kozeki, T. Dinh, A. Qamar, Y. Zhu, T. Namazu, N.-T. Nguyen, and D. V. Dao, Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching, RSC Adv., vol. 5, pp. 82121-82126, 2015, (IF=3.84)

A. Qamar, H.-P. Phan, J. Han, P. Tanner, T. Dinh, L. Wang, S. Dimitrijev, and D. V. Dao, Effect of device geometries and crystal orientations on the stress-dependent offset voltage of 3C-SiC(100) four terminal devices, J. Mater. Chem. C, vol. 3, no. 34, 2015, pp. 8804 – 8809. (IF=4.7)

T. Dinh, H.-P. Phan, D. V. Dao, P. Woodfield, A. Qamar, and N.-T. Nguyen, Graphite on Paper as Material for Sensitive Thermoresistive Sensors, J. Mater. Chem. C, 2015, 3, no. 34, 8776 – 8779. (IF=4.7) Featured on the back cover of the journal

H.-P. Phan, A. Qamar , D. V. Dao, T. Dinh, L. Wang, J. Han, P. Tanner, S. Dimitrijev, and N.-T. Nguyen, Orientation dependence of the pseudo-Hall effect in p-type 3C-SiC four-terminal devices under mechanical stress, RSC Advances, vol. 5, pp. 56377-56381, 2015. (IF=3.84)

T. Dinh, D. V. Dao, H.-P. Phan, L. Wang, A. Qamar, N.-T. Nguyen, P. Tanner, M. Rybachuk, Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature, Applied Physics Express, vol. 8, pp. 061303-1, 2015. (IF=2.4) Featured in Appl. Phys. Exp. Spotlights 2015

A. Qamar, H.-P. Phan , D. V. Dao, P. Tanner, T. Dinh, L. Wang, and S. Dimitrijev, The dependence of offset voltage in p-type 3C-SiC Van Der Pauw device on applied strain, IEEE Electron Device Lett., vol. 36, no.7, pp. 708-710, 2015. (IF=2.8)

A. Qamar, D. V. Dao, P. Tanner, H.-P. Phan, T. Dinh, and S. Dimitrijev, Influence of External Mechanical Stress on the Electrical Properties of Single Crystal n-3C-SiC/p-Si Heterojunction Diode, Applied Physics Express, vol. 8, pp. 061302-1, 2015. (IF=2.4)

H.-P. Phan, D. V. Dao, L. Wang, T. Dinh, N.-T. Nguyen, A. Qamar, P. Tanner, S. Dimitrijev, and Y. Zhu, Strain effect on electrical conductance of p-type nanocrystalline SiC thin film, Journal of Materials Chemistry C, vol. 3, pp. 1172-1176, 2015. (IF=4.7)

2014

A. Qamar, P. Tanner, D. V. Dao, H.-P. Phan, and T. Dinh, Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress, IEEE Electron Device Lett., vol. 35, no. 12, pp. 1293 – 1295, 2014. (IF=3.0)

P. H. Pham, T. Dinh, L. B. Dang, K. T. Nguyen, D. V. Dao, Micro cam system driven by electrostatic comb‑drive actuators based on SOI‑MEMS technology, Microsystem Technologies, 2014, accepted. (IF=0.875)